Imec Launches 300mm GaN Program
AIXTRON, GlobalFoundries, KLA, Synopsys and Veeco are the first partners in the program
By Mark LaPedus
Imec has launched a new program centered around 300mm gallium nitride (GaN) technology development for low- and high-voltage power electronics applications.
AIXTRON, GlobalFoundries, KLA, Synopsys and Veeco are the first partners in the program. Imec is a Belgium-based R&D organization.
Today, GaN is a hot market. For some time, several companies have been developing and shipping chips built around GaN materials. The two big markets for GaN-based chips are power electronics and RF.
GaN, a III/V compound that combines gallium and nitrogen, is a wide bandgap (WBG) semiconductor material. “A ‘bandgap’ is the amount of energy needed to release electrons in semiconductor materials so that the electrons can move freely—allowing electricity to flow,” according to PowerAmerica, a U.S.-based power semiconductor consortium.
WBG semiconductors have bandgaps that are greater than traditional silicon-based chips. Silicon has a bandgap of 1.1 eV, while GaN is 3.4 eV. Silicon carbide (SiC) has a bandgap of 3.3 eV.
Thus, GaN-based devices can outperform traditional silicon-based chips in various specialized applications, such as power electronics, RF and others.
Today, a growing number of companies sell GaN-based chips. Generally, GaN-based devices are manufactured in fabs using 200mm or smaller wafer sizes. In recent times, Infineon has demonstrated the ability to make GaN chips on 300mm wafers, but it’s unclear when this technology will move into production. Generally, the decision to move a new technology into production comes down to cost.
Imec’s new program hopes to accelerate the development of 300mm GaN technology in the market. The use of 300mm substrates will not only reduce GaN device manufacturing costs, but it will also allow the development of more advanced power electronics devices, such as efficient low-voltage point-of-load converters for CPUs and GPUs.
To enable the broad adoption of 300mm GaN technology, the industry also needs to develop a manufacturing flow. Imec’s GaN program track, part of the organization’s industrial affiliation program (IIAP) on GaN power electronics, has been set up to develop 300mm GaN epi growth, and low and high voltage GaN high electron mobility transistor (HEMT) process flows.
As part of the 300mm GaN program, a baseline lateral p-GaN HEMT technology platform will first be established for low-voltage applications (100V and beyond), using 300mm silicon as a substrate. For this, process module work centered around p-GaN etch and Ohmic contact formation is ongoing. Later, high-voltage applications are targeted.
For 650V and above, developments will utilize 300mm semi-spec and CMOS-compatible QST-engineered substrates, a material with poly-crystalline AlN core. During the developments, control over the bow of the 300mm wafers, and their mechanical strength are prime concerns.
The launch of Imec’s 300mm GaN program follows successful 300mm wafer handling tests and mask set development. Imec expects to have full 300mm capabilities installed in its 300mm cleanroom by the end of 2025.
Separately, Imec recently appointed Patrick Vandenameele as its next chief executive. Effective April 1, 2026, he will succeed current CEO Luc Van den hove, who will then assume the role of chair of Imec’s board. Since 2021, Vandenameele has been instrumental in shaping Imec’s R&D strategy, most recently in his role as executive vice president and co-chief operating officer.